высокая надежность PNP Transistor 2SA940

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-1.5

A

PTOT

Total dissipation at Tcase=25 ℃

25

W

T_j

Junction Temperature

150

℃

T_stg

Stora-1.5ge Temperature Range

-55〜150

℃

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

V(BR)CBO

Collector-Base Breakdown Voltage

I_C=-1mA

-150

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

I_C=-1mA

-150

V

V(BR)EBO

Emitter-Base Breakdown Voltage

I_E=-1mA

- 5

V

ICBO

Collector Cutoff Current

V_CB=-150V, I_E=0

-5

μA

ICEO

Collector Cutoff Current

V_CE=-150V, I_C=0

-5

μA

IEBO

Emitter Cutoff Current

V_EB=-5V, I_C=0

-5

μA

hFE

DC Current Gain

V_CE=-10V, I_C=-0.5A

40

140

VCE(sat)

Collector-Base Breakdown Voltage

I_C=-0.5A, I_B=-50mA

-0.85

V

VBE(sat)

Base-Emitter Saturation Voltage

I_C=-0.5A, I_B=-50mA

-1.5

V

a: tp≤300μs,δ≤2%