Тиристор обратнопроводящего действия, 1300 В, быстродействующий, обратнопроводящий, RCT

Device Type

VDRM

VDSM

SHR400R22

1300

1300

Repetitive peak off state leakage

I_DRM

35 mA

Critical rate of voltage rise

dV/dt

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ

Units

Conditions

RMS value of on-state current

I_TRMS

 630

A

Nominal value

Average on-state current

I_T(AV)

   400

A

Continuous single-phase,half sine wave,180°conduction

Peak one cycle surge on-state current(non repetitive)

I_TSM

7200

A

50Hz, sinusoidal wave-

shape, 180^o conduction, T_j = 115 ^oC

I²t Limit Value

I²t

200x10³

(On-Current)

A²s

31x10³

(Reverse Current)

Peak on-state voltage

V_TM

3.0

V

I_TM =1250A; T_j = 25 ^oC

Critical rate of rise of on-state

current

di/dt

      100

A/ms

V_D=1/2V_DRM,I_TM=800A f=60H_Z I_GM=1.5A,di_G/dt=1.0A/us,Tj=115℃      

Average reverse current

I_R(AV)

     150

A

Continuous single-phase,half sine wave,180°conduction

RMS reverse currrnt

I_R(RMS)

235

A

Peak reverse voltage

V_RM

2.5

V

I_RM=500A, T_j = 25 ^oC

Peak one cycle surge  reverse current(non repetitive)

I_RSM

2500

A

50Hz, sinusoidal wave-

shape, 180^o conduction, T_j = 115 ^oC

Critical rate of rise of commutating off-state voltage 

(dv/dt)_C

200

A/ms

I_TM=2000A,tw=60us,I_RM=1000A, ,V_DM=1/2V_DRM,Pulse width 60ms ,Tj=115℃,

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

20

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

4

W

Peak gate current

I_GM

4

A

Gate current required to trigger all units

I_GT

200

mA

V_D = 6 V;R_L = 6 ohms;T_C = 25 ^oC

Holding current

I_H

500

T_j = 25 ^oC ;R_L = 6 ohms

Gate voltage required to trigger all units

V_GT

3.0

V

V_D = 6 V;R_L = 6 ohms;T_C = 25^oC

Peak non- trigger voltage

V_GD

0.15

V

T_j = 115 ^oC;V_D=1/2V_DRM