Тиристор управления мощностью 1500А для управления фазой

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

 1500

A

Sinewave,180^o conduction,T_c=70^oC

RMS value of on-state current

I_TRMS

  2800

A

Nominal value

Peak one cpstcle surge

(non repetitive) current

I_TSM

30000

27000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

10x10⁶

A²s

8.3 msec and 10.0 msec

Latching current

I_L

    1500

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

     250

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.20

V

I_TM = 3000 A

Critical rate of rise of on-state

current (5)

di/dt

      300

A/ms

Switching from V_DRM£ 800 V,

non-repetitive

Critical rate of rise of on-state

current

di/dt

      100

A/ms

Switching from V_DRM£ 800 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

20

A

Gate current

I_GT

300 

mA

Gate voltage

V_GT

0.30

3.5 

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

ms

Turn-off time (with V_R = -50 V)

t_q

ms

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

0.012

^oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

0.002

^oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

 8000

10000

lb.

kN

Weight

W

Lb.

Kg.