Быстрая доставка Siemens Полностью рассеянный тиристор High DV / DT
Получите последнюю ценуВид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
транспорт: | Ocean,Air |
Порт: | Shanghai |
Вид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
транспорт: | Ocean,Air |
Порт: | Shanghai |
Модель: YZPST-N1042LS18
марка: YZPST
Функции: Взаимозаменяемая конфигурация усилительного шлюза , Высокая способность dV / dt . Устройство под давлением. Вся диффузная структура. Гарантированное максимальное время выключения .
Дирижирование - по состоянию
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Max. average value of on-state current |
IT(AV)M |
|
1042 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
IT(RMS)M |
|
2072 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
11.52 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
661x103 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
- |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.75 |
|
V |
ITM = 1700 A |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
500 |
|
A/ms |
Switching from VDRM £ 1000 V |
стробирование
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
4 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units
|
VGT |
|
3.0 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
динамический
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
- |
- |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
- |
- |
|
|
Turn-off time (with VR = -5 V) |
tq |
- |
- |
- |
ms |
ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
Reverse recovery current |
Irm |
- |
- |
- |
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
ТЕПЛО-МЕХАНИЧЕСКИЕ ХАРАКТЕРИСТИКИ И РЕЙТИНГИ
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
Thermal resistance - junction to case |
RQ (j-s) |
|
32 64 |
|
K/kW |
Double sided cooled Single sided cooled |
Mounting force |
F |
10 |
20 |
- |
kN |
|
Weight |
W |
|
|
- |
Kg |
about |
* Монтажные поверхности гладкие, плоские и смазанные
Примечание: схему и размеры корпуса см. На чертеже корпуса на странице 3 этих технических данных.
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.