PIM с траншевым полем IGBT, управляемым эмиттером диодом и крионом NTC
$3810-49 Piece/Pieces
$31≥50Piece/Pieces
Вид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
транспорт: | Ocean,Land,Express,Air |
Порт: | SHANGHAI |
$3810-49 Piece/Pieces
$31≥50Piece/Pieces
Вид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
транспорт: | Ocean,Land,Express,Air |
Порт: | SHANGHAI |
Модель: YZPST-P035PJE120AT1B
марка: Yzpst
место происхождения: Китай
VCES: 1200 В.
Vges: ± 20 В.
IC: 35а
CRM: 70A
Ptot: 172 Вт
Vce (sat): 2.15 В.
VgE(th: 5.6V
Продажа единиц жилья | : | Piece/Pieces |
Тип упаковки | : | 1. Антиэлектростатическая упаковка 2. коробка коробка 3. |
Пример с картинкой | : | |
Скачать | : |
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IGBT-инвертер
Максимум Рейтинг Ценности
Symbo |
Description |
Conditions |
Values |
Unit |
VCES |
Collector-Emitter Voltage |
Ty=25℃ |
1200 |
V |
VGEs |
Gate-Emitter Peak Voltage |
Ty=25℃ |
±20 |
V |
Ic |
Continuous DC Collector Current |
Tc=100℃ |
35 |
A |
CRM |
Repetitive Peak Collector Current |
tp=1ms |
70 |
A |
Ptot |
Total Power Dissipation |
Tc=25℃,Tyimax=175℃ |
172 |
W |
Характерные значения
Symbo |
Description |
Conditions |
Values |
Unit |
||
Min |
Typ. |
Max. |
||||
VcE(sat) |
Collector-Emitter Saturation Voltage |
VGE=15V,Ic=35A,Ty=25℃ |
|
2.15 |
|
V |
VGE=15V,Ic=35A,Tv=125℃ |
|
2.57 |
|
V |
||
VgE(th |
Gate Threshold Voltage |
VGE=VcE,c=1.2mA |
|
5.6 |
|
V |
CES |
Collector-Emitter Cut-Off Current |
VcE=1200V,VGE=0V |
|
|
1 |
mA |
GES |
Gate-Emitter Leakage Current |
VGE=20V,VcE=0V |
|
|
100 |
nA |
Cies |
Input Capacitance |
VcE=25V,VGE=OV,f=1MHz |
|
2590 |
|
pF |
Coes |
Output Capacitance |
|
180 |
|
pF |
|
Cres |
Reverse Transfer Capacitance |
|
86 |
|
pF |
|
td(on) |
Turn-on Delay Time |
VcE=600V VGF=±15V Ic=35A Rg=120 Inductive Load Ty=25℃ |
|
34 |
|
ns |
t |
Turn-on Rise Time |
|
20 |
|
ns |
|
td(off) |
Turn-off Delay Time |
|
230 |
|
ns |
|
t |
Turn-off Fall Time |
|
160 |
|
ns |
|
Eon |
Turn-on Switching Loss |
|
2.5 |
|
mJ |
|
Eoff |
Turn-off Switching Loss |
|
2.5 |
|
mJ |
|
lsc |
Short Circuit Data |
VGE≤15V,Vcc=800V tp≤10μs,Tv=150℃ |
|
151 |
|
A |
RthJC |
Thermal Resistance,Junction to Case |
Per IGBT |
|
|
0.87 |
K/W |
Tw OF |
Virtual JunctionTemperature |
Under Switching |
-40 |
|
150 |
℃ |
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