BTA208X-600E Triac High DV/DT с сильной устойчивостью к электромагнитному границе раздела
$0.145000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Вид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
транспорт: | Others,Ocean |
Порт: | SHANGHAI |
$0.145000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Вид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
транспорт: | Others,Ocean |
Порт: | SHANGHAI |
Модель: YZPST-BTA208X-600E
марка: Yzpst
место происхождения: Китай
IT(RMS): 8A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
ITSM: 80A
I2t: 32A2S
DI/dt: 50A/ μs
Продажа единиц жилья | : | Piece/Pieces |
Тип упаковки | : | 1. Антиэлектростатическая упаковка 2. коробка картонной коробки 3. Особа |
Пример с картинкой | : | |
Скачать | : |
The file is encrypted. Please fill in the following information to continue accessing it
BTA208 Series 8A Triacs
YZPST-BTA208X-600E
ОПИСАНИЕ:S соблюдает стандарты UL (файл ref: e516503).
ОСНОВНОЙ ФУНКЦИИ:
symbol |
value |
unit |
IT(RMS) |
8 |
A |
VDRM/VRRM |
600/800 |
V |
VTM |
≤1.5 |
V |
Абсолютный Максимум Рейтинги:
Symbol |
Parameter |
Value |
Unit |
ITSM |
Non repetitive surge peak on-state Current (tp=10ms) |
80 |
A |
I2t |
(tp=10ms) |
32 |
A2S |
dI/dt |
IG=2IGT ,tr≤100ns,Tj=125℃ |
50 |
A/ μs |
IGM |
Peak gate current(tp=20us) |
2 |
A |
PG(AV) |
Average gate power |
1=0.5 |
W |
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+125 -40--+125 |
℃ |
Viso |
AC RMS App lied for 1 minute Between lead and case |
1800 |
V |
I2t value for fusing (tp=10ms) |
I2t |
32 |
A2s |
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
5 |
W |
Электрические характеристики (TJ = 25 ℃ , если не указано иное)
Parameter | Value | |||||||
Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
IGT | VD=12V, | 5 | 10 | 35 | 50 | mA | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.5 | V | |||
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |||
IH | IT=100mA | MAX | 10 | 20 | 40 | 60 | mA | |
Ⅰ-Ⅲ | 20 | 25 | 50 | 70 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 25 | 35 | 70 | 90 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||||
dV/dt | MIN | 50 | 200 | 500 | 1000 | V/ µs |
|
|
Ⅱ |
|
70 |
90 |
|
dV/dt |
VD=2/3VDRM Tj=125℃ Gate open |
MIN |
200 |
500 |
V/ µs |
Статические характеристики
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=11A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM | Tj=25℃ | 5 | µA | ||
IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 1 | mA |
УПАКОВКА Механический ДАННЫЕ
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.