$0.09-0.1 /Piece/Pieces
| Вид оплаты: | L/C,T/T,Paypal |
| Инкотермс: | FOB,CFR,CIF |
| Количество минимального заказа: | 6000 Piece/Pieces |
| транспорт: | Ocean,Land,Express,Others |
| Порт: | SHANGHAI |
Оттенок:
Модель: YZPST-BTA208S-800B
марка: Yzpst
место происхождения: Китай
IT(RMS): 8A
VDRM/VRRM: 600/800V
IGT: ≤10mA
ITSM T=20ms: 65A
ITSM T= 16.7ms: 71A
I2t: 21A2S
Di/dt: 100A/μs
| Продажа единиц жилья | : | Piece/Pieces |
| Тип упаковки | : | 1. Антиэлектростатическая упаковка 2. коробка картонной коробки 3. Особа |
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BTA208 Triacs
YZPST-BTA208S-800B
Desrpription:
Основные особенности
| Symbol | Value | Unit |
| IT(RMS) | 8 | A |
| VDRM/VRRM | 600/800 | V |
| IGT | ≤10 | mA |
АБСОЛЮТНЫЕ МАКСИМАЛЬНЫЕ ЗНАЧЕНИЯ
| Symbol | PARAMETER | Value | Unit | |
| IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤102℃ | 8 | A |
| Non repetitive surge peak on-state current | t=20ms | 65 | ||
| ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 71 | A |
| I2t | I2t Value for fusing | t= 10ms | 21 | A2S |
| di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 12 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
| IGM | Peak gate current | — | 2 | A |
| VGM | Peak gate voltage | — | 5 | W |
| PGM | Peak gate power | — | 5 | W |
| PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
| Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
| Tj | Operating junction temperature range | 125 | ℃ | |
Электрические характеристики (TJ = 25。C, если не указано иное)
Статические характеристики
| Symbol | Value | ||||||
| Parameter | Test Condition | Quadrant | MIN | TYPE | MAX | Unit | |
| IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
| VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
| VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
| VT | On-state voltage | IT= 10A | - | 1.3 | 1.65 | V | |
| IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 60 | mA |
| Ⅰ-Ⅲ | - | - | 60 | mA | |||
| IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
| ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA | |
Динамические характеристики
| Symbol | Value | ||||
| Parameter | Test Condition | MIN | TYPE | Unit | |
| dVD/dt | Critical rate of rise of off- state voltage | VDM = 67% VDRM(max); Tj = 125 ˚C | 1000 | 4000 | V/us |
| exponential waveform; gate open circuit | |||||
| dIcom/dt | Critical rate of change of commutating current | VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; without snubber; gate open circuit | 14 | A/ms | |
| T | Gate controlled turn-on time | ITM = 12 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs | 2 | us | |
| tgt | |||||
УПАКОВКА Механический ДАННЫЕ
До-220
Номер Телефона : 86-514-87782298
Whatsapp: +86 13805278321
Адрес Компании : 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
сайт: https://www.yzpst.ru
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