TO-94 Керамические шпильки триаки 100А

$26≥100Piece/Pieces

Вид оплаты:	L/C,T/T,Paypal
Инкотермс:	FOB,CFR,CIF
Количество минимального заказа:	100 Piece/Pieces
транспорт:	Ocean,Air
Порт:	Shanghai

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Описание продукта

Атрибуты продукта

Модель: YZPST-KS100A600V

марка: YZPST

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Продажа единиц жилья	:	Piece/Pieces
Тип упаковки	:	Для получения более подробной информации о продукте и транзакции, пожалуйста, свяжитесь с нами по электронной почте: info@yzpst.com

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Описание продукта

Керамические шпильки триаки YZPST-KS100A600V

М Акси м у м R a t i n g s А н д С ч а р ас т е г т ектронное

Symbol	Parameter		Values	Units	Test Conditions
ON-STATE
ITAV	Mean on-state current		-	A	Sinewave,180° conduction,Tc=100°C
ITRMS	RMS value of on-state current		100	A	Nominal value
ITSM	Peak one cycle surge (non repetitive) current		900	A	10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C
I2t	I square t		4050	A2s	8.3 msec and 10.0 msec
IL	Latching current		100	mA	VD = 12 V; RL= 12 ohms
IH	Holding current		30	mA	VD = 12 V; I = 1 A
VTM	Peak on-state voltage		2.0	V	ITM = 150 A; Duty cycle ≤ 0.01%; Tj = 25 °C
di/dt	Critical rate of rise of on-state current	non-repetitive	300	A/µs	Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM
di/dt	Critical rate of rise of on-state current	repetitive	50	A/µs
BLOCKING
VDRM VRRM	Repetitive peak off state voltage Repetitive peak reverse voltage		600	V
VDSM VRSM	Non repetitive peak off state voltage Non repetitive peak reverse voltage		700	V
IDRM IRRM	Repetitive peak off state current Repetitive peak reverse current		10	mA	Tj = 125 °C ,VRRM VDRM applied
dV/dt	Critical rate of voltage rise		100	V/µs	TJ=TJmax, linear to 80% rated VDRM
TRIGGEING
PG(AV)	Average gate power dissipation		-	W
PGM	Peak gate power dissipation		-	W
IGM	Peak gate current		-	A
IGT	Gate trigger current		200	mA	TC = 25 °C
VGT	Gate trigger voltage		3.0	V	TC = 25 °C
VT(T0)	Treshold voltage		1	V
rT	Slope resistance		2.4	mΩ
VGD	Gate non-trigger voltage		0.2	V	Tj = 125 °C
SWITCHING
tq	Turn-off time		-	µs	Tj = 125 °C
td	Delay time		-	µs	Gate current 1A, di/dt=1A/μs, Vd=0.67%VDRM, TJ=25 °C
Qrr	Reverse recovery charge		-

Т е р м а л А н д М ес ч а н я кал

Symbol		Parameter	Values	Units		Test Conditions
Tj	Operating temperature		-40~125	°C
Tstg	Storage temperature		-40~150	°C
R th (j-c)	Thermal resistance - junction to case		0.4	°C/W	DC operation ,Single sided cooled
R th (c-s)	Thermal resistance - case to sink		0.08	°C/W	Single sided cooled
P	Mounting force		-	Nm
W	Weight		-	g	about