$4.5200-999 Piece/Pieces
$4.2≥1000Piece/Pieces
| Вид оплаты: | L/C,T/T,Paypal |
| Инкотермс: | CFR,FOB,CIF |
| транспорт: | Ocean,Land,Express,Others,Air |
| Порт: | SHANGHAI |
Оттенок:
Модель: YZPST-M1A080120L1
марка: Yzpst
место происхождения: Китай
VDSmax: 1200V
VGSMAX: -10/+25 В
VGSOP: -5/+20 В
ID Tc=25℃: 36A
ID Tc=100℃: 24A
ID(pulse): 80A
PD: 192W
TJ, TSTG: -55 to +150℃
| Продажа единиц жилья | : | Piece/Pieces |
| Тип упаковки | : | 1. Антиэлектростатическая упаковка 2. коробка картонной коробки 3. Тренанка |
| Пример с картинкой | : |
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Импульсные мощные приложения
|
Part Number |
Package |
|
M1A080120 L1 |
TO-247-4 |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VDSmax | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100μA | |
| VGSmax | Gate-Source Voltage | -0.4 | V | Absolute maximum values | |
| VGSop | Gate-Source Voltage | -0.25 | V | Recommended operational values | |
| ID | Continuous Drain Current | 36 | A | VGS=20V, Tc=25℃ | |
| 24 | VGS=20V, Tc=100℃ | ||||
| ID(pulse) | Pulsed Drain Current | 80 | A | Pulse width tp limited by TJmax | |
| PD | Power Dissipation | 192 | W | Tc=25℃, TJ=150℃ | |
| TJ, TSTG | Operating Junction and Storage Temperature | -55 to +150 | ℃ |
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | / | / | V | VGS=0V, ID=100μA | |
| VGS(th) | Gate Threshold Voltage | 2 | 2.4 | 4 | V | VDS=VGS, ID=5mA | Fig. 11 |
| / | 1.8 | / | VDS=VGS, ID=5mA, TJ=150℃ | ||||
| IDSS | Zero Gate Voltage Drain Current | / | 1 | 100 | µA | VDS=1200V, VGS=0V | |
| IGSS+ | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=25V | |
| IGSS- | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=-10V | |
| RDS(on) | Drain-Source On-State Resistance | / | 80 | 98 | mΩ | VGS=20V, ID=20A | Fig. |
| / | 140 | / | VGS=20V, ID=20A, TJ=150℃ | 4,5,6 | |||
| Ciss | Input Capacitance | / | 1475 | / | VGS=0V | Fig. | |
| Coss | Output Capacitance | / | 94 | / | pF | VDS=1000V | 15,16 |
| Crss | Reverse Transfer Capacitance | / | 11 | / | f=1MHz | ||
| Eoss | Coss Stored Energy | / | 52 | / | µJ | VAC=25mV | |
| EON | Turn-On Switching Energy | / | 564 | / | µJ | VDS=800V, VGS=-5V/20V | |
| EOFF | Turn-Off Switching Energy | / | 260 | / | ID=20A, RG(ext)=2.5Ω, L=200μH | ||
| td(on) | Turn-On Delay Time | / | 9.3 | / | |||
| tr | Rise Time | / | 9.5 | / | VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω | ||
| td(off) | Turn-Off Delay Time | / | 18 | / | ns | ||
| tf | Fall Time | / | 7.6 | / | |||
| RG(int) | Internal Gate Resistance | / | 3.1 | / | Ω | f=1MHz, VAC=25mV | |
| QGS | Gate to Source Charge | / | 24 | / | VDS=800V | ||
| QGD | Gate to Drain Charge | / | 15 | / | nC | VGS=-5V/20V | |
| QG | Total Gate Charge | / | 79 | / | ID=20A |
Обеспечить регресс Диод чарактса
| Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
| VSD | Diode Forward Voltage | 3.6 | / | V | VGS=-5V, ISD=10A | Fig. 8,9,10 |
| 3.3 | / | VGS=-5V, ISD=10A, TJ=150℃ | ||||
| IS | Continuous Diode Forward Current | / | 44 | A | TC=25℃ | |
| trr | Reverse Recover Time | 35 | / | ns | ||
| Qrr | Reverse Recovery Charge | 91 | / | nC | VR=800V, ISD=20A | |
| Irrm | Peak Reverse Recovery Current | 4.5 | / | A |
Упаковка Размеры
Пакет до 247-4
Номер Телефона : 86-514-87782298
Whatsapp: +86 13805278321
Адрес Компании : 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
сайт: https://www.yzpst.ru
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