KK2000A4000V фазорегулятор силовой тиристорный 4000v
$268≥20Piece/Pieces
Вид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
Количество минимального заказа: | 20 Piece/Pieces |
транспорт: | Ocean,Air |
Порт: | Shanghai |
$268≥20Piece/Pieces
Вид оплаты: | L/C,T/T,Paypal |
Инкотермс: | FOB,CFR,CIF |
Количество минимального заказа: | 20 Piece/Pieces |
транспорт: | Ocean,Air |
Порт: | Shanghai |
Модель: YZPST-KK2000A4000V
марка: YZPST
Продажа единиц жилья | : | Piece/Pieces |
Тип упаковки | : | 1. Антистатическая упаковка 2. Картонная коробка 3. Пластиковая защитная упаковка |
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ТИРИСТОР ВЫСОКОЙ МОЩНОСТИ ДЛЯ ПРИМЕНЕНИЯ ФАЗОВОГО УПРАВЛЕНИЯ
YZPST-KK2000A4000V
Особенности:
, Вся диффузная структура
, Взаимозаменяемая конфигурация усилительного шлюза
, Гарантированное максимальное время выключения
, Высокая способность dV / dt
, Устройство под давлением
ЭЛЕКТРИЧЕСКИЕ ХАРАКТЕРИСТИКИ И РЕЙТИНГИBloc к ИНГАМ - выкл С тейт
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
KK2000A |
4000 |
4000 |
4100 |
V RRM = R e p etiti v e п е к к г е об е р с й v о LTA г е
V DRM = R e p etiti v e п е к к о ф ф с тейт v о LTA г е
V R S M = Нет г е р е etiti v п е к к г е об е р с й v о LTA г е (2 )
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
П о воздуховоды - на ы Tate
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
2000 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
3300 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
42000
39000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
5.5x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.60 |
|
V |
ITM = 2000 A; Tj = 125 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM £ 1000 V |
ЗГ тин
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
20 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units |
VGT |
0.30 |
5 4 |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
Д у па м IC
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
|
2.0 |
|
ms |
ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -5 V) |
tq |
|
|
100 |
|
ms |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery current |
Irr |
|
200 |
|
|
A |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -50 V; Tj = 125 oC |
ТЕПЛО-МЕХАНИЧЕСКИЕ ХАРАКТЕРИСТИКИ И РЕЙТИНГИ
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012 |
|
o C/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002 |
|
o C/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* М о ип ти н г су R F A C ES s m oo t h , е ш а н С т е а с е изд
N о том : f o r c a s e о у ИТ н е а н д д я м е нс я о нс, снежн c a s e о у ИТ н е Dr A W I N G в p a g e 3 часа дня т ч Т е с Нп ческое Данные
A: |
84 |
mm |
B: |
118 |
mm |
C: |
108 |
mm |
E: |
36 |
mm |
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