Высокое напряжение Тиристорного управления 6500V kp1000A скл

Symbol

Definition

Conditions

min.

typ.

max.

Unit

V

max. non-repetitive reverse/forward blocking voltage

T_J = 25°C

6600

V

V

max. repetitive reverse/forward blocking voltage

T_J = 25°C

6500

V

V_T

On-state voltage

I_T=1000 A

T_J = 25°C

2.95

V

I_T(AV)

average forward current

T_C=25°C

1000

A

I_T(RMS)

RMS forward current

180° sine

1140

A

R_thJC

thermal resistance junction to case

22

K/KW

R_thCH

thermal resistance case to heatsink

4

K/KW

I_TSM

max. forward surge current

t = 10 ms; (50 Hz), sine

T_J = 25°C

9.7

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

T_J = 25°C

470

kA²s

di/dt

Rate of rise of on-state current

T_J = 125°C; f = 50 Hz

t_P=200µs;di_G/dt=0.15A/µs;

I_G=0.15A;V_D= 2/3V_DRM

repetitive

50

A/µs

non-repet

1000

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

V_D= 2/3
V_DRM

R_GK =∞; method 1 (linear voltage rise)

T_J = 125°C

2000

V/µs

V_GT

gate trigger voltage

V_D = 6V

T_J = 25°C

2.6

V

I_GT

gate trigger current

V_D = 6V

T_J = 25°C

400

mA

I_L

latching current

T_J = 25°C

500

mA

I_H

holding current

T_J = 25°C

900

mA

t_gd

gate controlled delay time

T_J = 25°C

3

µs

t_q

Turn-off time

V_R=10 V; I_T=20A; V_D= 2/3
V_DRM

T_J = 150°C

600

µs

T_stg

storage temperature

-40

140

°C

T_J

virtual junction temperature

125

°C

W_t

Weight

g

F

mounting force

14

22

24

kN