$0.125000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
| Вид оплаты: | L/C,T/T,Paypal |
| Инкотермс: | FOB,CFR,CIF |
| транспорт: | Ocean,Land,Air,Express,Others |
| Порт: | SHANGHAI |
Оттенок:
Модель: YZPST-BTA212X-600D
марка: Yzpst
место происхождения: Китай
IT(RMS): 12A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
Tstg: -40~150℃
TJ.: -40 ~ 125 ℃
ITSM: 120A
I2t: 78A2s
DI/dt: 50A/ μs
| Продажа единиц жилья | : | Piece/Pieces |
| Тип упаковки | : | 1. Антиэлектростатическая упаковка 2. коробка картонной коробки 3. Особа |
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BTA212 12A Triacs
YZPST-BTA212X-600D
ОСНОВНОЙ ФУНКЦИИ:
|
symbol |
value |
unit |
|
IT(RMS) |
12 |
A |
|
VDRM/VRRM |
600/800/1200 |
V |
|
VTM |
≤1.5 |
V |
Абсолютный Максимум Рейтинги:
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
|
Operating junction temperature range |
Tj |
-40~125 |
℃ |
|
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800/1200 |
V |
|
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800/1200 |
V |
|
RMS on-state current |
IT(RMS) |
12 |
A |
|
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
120 |
A |
|
I2t value for fusing (tp=10ms) |
I2t |
78 |
A2s |
|
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
|
Peak gate current |
IGM |
4 |
A |
|
Average gate power dissipation |
PG(AV) |
1 |
W |
|
Peak gate power |
PGM |
5 |
W |
Электрические характеристики (TJ = 25 ℃ , если не указано иное)
3 квадранта :
| Parameter | Value | |||||||
| Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
| IGT | VD=12V, | 5 | 10 | 35 | 50 | mA | ||
| VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.5 | V | |||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |||
| IH | IT=100mA | MAX | 5 | 10 | 40 | 60 | mA | |
| Ⅰ-Ⅲ | 20 | 30 | 50 | 70 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 25 | 40 | 60 | 80 | mA |
| VD=2/3VDRM Tj=125℃ Gate open | ||||||||
| dV/dt | MIN | 100 | 200 | 500 | 1000 | V/ µs | ||
4 квадранта :
| Parameter | Value | |||||
| Test Condition | Quadrant | C | B | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 25 | 50 | mA | |||
| IGT | VD=12V, | Ⅳ | 50 | 70 | mA | |
| VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
| VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
| IH | IT=100mA | MAX | 40 | 60 | mA | |
| Ⅰ-Ⅲ- Ⅳ | 50 | 70 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 70 | 90 | mA |
| VD=2/3VDRM Tj=125℃ Gate open | ||||||
| dV/dt | MIN | 200 | 500 | V/ µs | ||
Статические характеристики
| Symbol | Test Condition | Value | Unit | ||
| VTM | ITM=17A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
| IDRM | Tj=25℃ | 5 | µA | ||
| IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 1 | mA |
Тепло Сопротивление
| Symbol | Test Condition | Value | Unit | |
| TO-220A(Ins） | 2.3 | |||
| TO-220B(Non-Ins） | 1.5 | |||
| TO-220F(Ins） | 2.5 | ℃/W | ||
| Rth(j-c) | junction to case(AC) | TO-263 | 1.5 | |
Пакет механических данных
Номер Телефона : 86-514-87782298
Whatsapp: +86 13805278321
Адрес Компании : 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
сайт: https://www.yzpst.ru
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